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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SCS202NF датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SCS202NF датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente SCS202NF 80 V, 300 mA Plastic-Encapsulated, Dual Series Chips Small Signal Switching Diode 01-April-2009 Rev. B Page 1 of 2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Ultra high speed switching High reliability Suitable for high packaging density layout Fast reverse recovery time : trr = 1.5ns (typ.) Construction: silicon epitaxial planar PACKAGING INFORMATION Four types of packaging are available Weight: 0.0078 g (Approx.) MARKING CODE N , A3 ABSOLUTE MAXIMUM RATINGS (each diode) Parameter Symbol Ratings Unit Peak Reverse Voltage VRM 80 V DC Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current 1 μS ISURGE 4 A Total Power Dissipation PD 200 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)(each diode) Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward Voltage VF - - 1.2 V IF = 100 mA Reverse Voltage Leakage Current IR - - 0.1 μA VR = 70V Diode Capacitance CT - - 3.5 pF VR = 6 V, f = 1 MHz Reverse Recovery Time TRR - - 4.0 nS VR = 6 V, IF = 5 mA Notes: 1. FR–5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. SOT-323 Top View A L C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.00 2.20 F 0.20 0.40 B 2.15 2.45 G - - C 1.15 1.35 H 0.525 REF. D 0.90 1.10 J 0.08 0.15 E 1.20 1.40 |
Аналогичный номер детали - SCS202NF_09 |
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Аналогичное описание - SCS202NF_09 |
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ссылки URL |
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