Microsemi reserves the right to change, without notice, the specifications and information contained herein.

MS3023

RF & Microwave Transistors

General Purpose Amplifier Applications

GENERAL DESCRIPTION

The MS3023 is a common base, hermetically sealed silicon NPN microwave power

transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz

frequency range. Gold metallization and emitter ballasting provide long-term

reliability and superior ruggedness.

FEATURES

• GOLD METALLIZATIOM

• P

• 2.0 GHz

• G

• INFINITE VSWR CAPABLE @ RATED CONDITIONS

• HERMETIC PACKAGE

• COMMON BASE CONFIGURATION

ABSOLUTE MAXIMUM RATINGS @ 25

°°°°C

SYMBOL

PARAMETER

VALUE

UNITS

1

Power Dissipation

12.5

W

1

Device Current

550

mA

Collector Supply Voltage

35

V

Junction Temperature (Pulsed RF Operation)

+200

°C

Storage Temperature

-65 to +150

°C

Junction-Case Thermal Resistance

14.0

°C/W

NOTES:

1. At rated output power, pulse conditions and MSC fixture

Rev. A: Apr. 2010