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MRF581 датащи(PDF) 2 Page - Microsemi Corporation |
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MRF581 датащи(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page ![]() Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. MRF581 MRF581G MRF581A MRF581AG ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Value Symbol Test Conditions Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage MRF581 (IC = 5.0 mAdc, IB = 0) MRF581A 18 15 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) 30 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 2.5 - - Vdc ICBO Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) - - 0.1 mA IEBO Emitter Cutoff Current (Vbe = 2.5 Vdc) - - 0.1 mA (on) HFE DC Current Gain MRF581 (IC = 50 mAdc, VCE = 5.0 Vdc) MRF581A 50 90 - 200 250 - DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit COB Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) - 2.0 3.0 pF Ftau Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) - 5.0 - GHz |
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