MMBTA55 datasheet(2/4 Pages) SECOS

2 / 4 page

ELECTRICAL CHARACTERISTICS (TA = 25

unless otherwise noted)

CHARACTERISTIC

SYMBOL

Min.

Max.

UNIT

OFF CHARACTERISTICS

Collector - Emitter Breakdown Voltage

(3)

MMBTA55

-60

(IC = -1.0 mA, IB = 0)

MMBTA56

V(BR)CEO

-80

Emitter - Base Breakdown Voltage

(IE = -100 µA, IC = 0)

V(BR)EBO

-4.0

Collector Cutoff Current

(VCE = -60 V, IB = 0 V)

ICES

-0.1

Collector Cutoff Current

(VCB = -60 V, IE = 0)

MMBTA55

-0.1

(VCB = -80 V, IE = 0)

MMBTA56

ICBO

-0.1

µA

ON CHARACTERISTICS

DC Current Gain

(IC = -10 mA, VCE = -1.0 V)

100

(IC = -100 mA, VCE = -1.0 V)

hFE

100

Collector - Emitter Saturation Voltage

(IC = -100 mA, IB = -10 mA)

VCE(sat)

-0.25

Base - Emitter Saturation Voltage

(IC = -100 mA, Vce =-1.0V)

VBE(ON)

--1.2

SMALL - SIGNAL CHARACTERISTICS

Current - Gain - Bandwidth Product

(4)

(IC = -100 mA, VCE = -1.0 V, f = 100 MHz)

-MHz

3. Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0 %.

4. fT is defined as the frequency at which | hfe | extrapolates to unity.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Figure 1. Switching Time Test Circuits

OUTPUT

TURN-ON TIME

-1.0 V

VCC

+40 V

* CS t 6.0 pF

100

Vin

5.0 mF

tr = 3.0 ns

+10 V

5.0 ms

OUTPUT

TURN-OFF TIME

+VBB

VCC

+40 V

* CS t 6.0 pF

100

Vin

5.0 mF

tr = 3.0 ns

5.0 ms

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

01-Jun-2002 Rev. A

Page 2 of 4

Elektronische Bauelemente

MMBTA55 / MMBTA56

PNP Silicon

Driver Transistor

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