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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MMBT5401 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT5401 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente MMBT5401 PNP Silicon General PurposeTransistor 01-June-2002 Rev. A Page 1 of 3 Top View A L C B D G H J F K E 1 2 3 1 2 3 FEATURES Ideal for medium power amplification and switching MARKING 2L ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Collector to Emitter Voltage VCEO -150 V Collector to Base Voltage VCBO -160 V Emitter to Base Voltage VEBO -5.0 V Collector Current - Continuous IC -500 mA THERMAL CHARACTERISTICS Parameter Symbol Ratings Unit Total Power Dissipation TA = 25°C Derate above 25°C PD 225 1.8 mW mW / ℃ Thermal Resistance, Junction to Ambient RθJA 556 ℃ / W Total Power Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C PD 300 2.4 mW mW / ℃ Thermal Resistance, Junction to Ambient RθJA 417 ℃ / W Junction, Storage Temperature TJ, TSTG -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Test Conditions Symbol Min. Max. Unit Off Characteristics Collector–Emitter Breakdown Voltage IC = -1.0 mA, IB = 0 BVCEO -150 - V Collector–Base Breakdown Voltage IC = -100 μA, IE = 0 BVCBO -160 - V Emitter–Base Breakdown Voltage IE = -10 μA, IC = 0 BVEBO -5.0 - V Collector Cutoff Current VCB = -120 V, IE = 0 VCB = -120 V, IE = 0, TA = 100°C ICES - -100 -100 nA μA On Characteristics DC Current Gain IC = –1.0 mA, VCE = –5.0 V IC = –10 mA, VCE = –5.0 V IC = –50 mA, VCE = –5.0 V hFE 80 100 50 - 200 - - Collector–Emitter Saturation Voltage IC = –10 mA, IB = –1.0 mA IC = –50 mA, IB = –5.0 mA VCE(sat) - -0.2 -0.5 V Base–Emitter Saturation Voltage IC = –10 mA, IB = –1.0 mA IC = –50 mA, IB = –5.0 mA VBE(sat) - -1.0 -1.0 V Small Signal Characteristics Current-Gain - Bandwidth Product IC =-10 mA, VCE = -10 V, f = 100 MHz fT 100 - MHz Output Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz COBO - 6.0 pF Small Signal Current Gain IC = -1.0 mA, VCE =-10 V, f = 1.0 kHz hFE 50 200 - Noise Figure IC = –200 μA, VCE = –5.0 V, RS = 10 Ω, f = 1.0 kHz NF - 8.0 dB Note: 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.80 3.00 G 0.10 REF. B 2.25 2.55 H 0.55 REF. C 1.20 1.40 J 0.08 0.15 D 0.90 1.15 K 0.5 REF. E 1.80 2.00 L 0.95 TYP. F 0.30 0.50 |
Аналогичный номер детали - MMBT5401 |
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Аналогичное описание - MMBT5401 |
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