MMBT3906W datasheet(2/5 Pages) SECOS

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Any changing of specification will not be informed individual

MMBT3906W

PNP Silicon

General Purpose Transistor

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(3)

DC Current Gain

(IC = –0.1 mAdc, VCE = –1.0 Vdc)

(IC = –1.0 mAdc, VCE = –1.0 Vdc)

(IC = –10 mAdc, VCE = –1.0 Vdc)

(IC = –50 mAdc, VCE = –1.0 Vdc)

(IC = –100 mAdc, VCE = –1.0 Vdc)

HFE

100

—

300

—

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

VCE(sat)

—

–0.25

–0.4

Vdc

Base–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

VBE(sat)

–0.65

—

–0.85

–0.95

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)

250

—

MHz

Output Capacitance

(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

4.5

Input Capacitance

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

Input Impedance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hie

2.0

kΩ

Voltage Feedback Ratio

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hre

0.1

X 10–4

Small–Signal Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hfe

100

400

—

Output Admittance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hoe

3.0

mmhos

Noise Figure

(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

—

4.0

SWITCHING CHARACTERISTICS

Delay Time

(VCC = –3.0 Vdc, VBE = 0.5 Vdc,

IC = –10 mAdc, IB1 = –1.0 mAdc)

—

Rise Time

(VCC = –3.0 Vdc, VBE = 0.5 Vdc,

IC = –10 mAdc, IB1 = –1.0 mAdc)

—

Storage Time

(VCC = –3.0 Vdc, IC = –10 mAdc,

IB1 = IB2 = –1.0 mAdc)

—

225

Fall Time

(VCC = –3.0 Vdc, IC = –10 mAdc,

IB1 = IB2 = –1.0 mAdc)

—

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

3 V

275

10 k

1N916

CS < 4 pF*

3 V

275

10 k

CS < 4 pF*

< 1 ns

+0.5 V

10.6 V

300 ns

Duty Cycle = 2%

< 1 ns

+9.1 V

10.9 V

Duty Cycle = 2%

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2004 Rev. B

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