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MMBT589 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали MMBT589
подробное описание детали  General Purpose Transistor
PDF  3 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMBT589 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  MMBT589 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH MMBT589 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH MMBT589 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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Any changing of specification will not be informed individual
MMBT589
P
NP Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Figure 1. DC Current Gain versus
Collector Current
Figure 2. DC Current Gain versus
Collector Current
Figure 3. “On” Voltages
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
Figure 5. Collector Emitter Saturation Voltage
versus Collector Current
Figure 6. Collector Emitter Saturation Voltage
versus Collector Current
10
0.001
IC, COLLECTOR CURRENT (AMPS)
200
150
100
50
IC, COLLECTOR CURRENT (mA)
100
1000
1.0
130
90
70
50
100
1000
1.0
IC, COLLECTOR CURRENT (mA)
1.0
0.4
0.3
0.2
0.1
0
IC, COLLECTOR CURRENT (AMPS)
0.01
0.001
1.0
0.95
0.6
0.55
0.5
1.0
0.01
IB, BASE CURRENT (mA)
1.0
0.6
0.4
0.2
0
IC, COLLECTOR CURRENT (AMPS)
0.001
1.8
1.0
0.8
0.6
0.2
0
0.1
0.1
0
0.01
0.1
1.0
10
110
150
170
10
0.1
1.0
10
10
1000
100
0.8
0.01
10
1.0
0.4
VCE = -2.0 V
190
210
230
VCE = -1.0 V
125°C
25°C
-55°C
0.8
0.7
0.6
0.5
0.9
VBE(sat)
VCE(sat)
VBE(on)
0.7
0.65
0.8
0.75
0.9
0.85
IC/IB = 100
IC/IB = 10
1.6
1.4
1.2
IC/IB = 100
IC/IB = 10
1000 mA
100 mA
50 mA
10 mA
01-Jun-2002 Rev. A
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