APTM120U10DAG

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Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

1200

V

116

Continuous Drain Current

86

Pulsed Drain current

464

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

120

m

Ω

Maximum Power Dissipation

3290

W

Avalanche current (repetitive and non repetitive)

24

A

Repetitive Avalanche Energy

50

Single Pulse Avalanche Energy

3200

mJ

Application

•

Zero Current Switching resonant mode

Features

•

-

-

Low input and Miller capacitance

-

Low gate charge

-

Avalanche energy rated

-

Very rugged

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

M5 power connectors

•

High level of integration

•

AlN substrate for improved thermal performance

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Low profile

•

RoHS Compliant

Single switch

with Series diodes

MOSFET Power Module