Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

g

fs

Forward Transconductance

V

117

S

C

iss

Input Capacitance

V

f = 1MHz

23994

pF

C

rss

Reverse Transfer Capacitance

245

C

oss

Output Capacitance

2201

C

o(cr)

4

Effective Output Capacitance, Charge Related

V

1170

C

o(er)

5

Effective Output Capacitance, Energy Related

606

Q

g

Total Gate Charge

V

V

598

nC

Q

gs

Gate-Source Charge

128

Q

gd

Gate-Drain Charge

251

t

d(on)

Turn-On Delay Time

Resistive Switching

V

R

6

134

ns

t

r

Current Rise Time

156

t

d(off)

Turn-Off Delay Time

408

t

f

Current Fall Time

123

Static Characteristics

Dynamic Characteristics

Source-Drain Diode Characteristics

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.

4 C

5 C

V

6 R

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

G

D

S

Unit

V

V/°C

Ω

V

mV/°C

μA

nA

Unit

A

V

ns

μC

A

V/ns

Min

Typ

Max

600

0.60

0.042

0.055

2.5

4

5

-10

250

1000

±100

Min

Typ

Max

84

447

1.0

370

690

2.6

7.0

14.5

20

25

Test Conditions

V

Reference to 25°C, I

V

V

V

T

V

T

V

Test Conditions

MOSFET symbol

showing the

integral reverse p-n

junction diode

(body diode)

I

T

T

I

3

T

V

T

di

T

T

I

T

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Gate-Source Threshold Voltage

Threshold Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Peak Recovery dv/dt

Symbol

V

BR(DSS)

∆V

R

DS(on)

V

GS(th)

∆V

I

DSS

I

GSS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

I

rrm

dv/dt

APT80F60J