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APT77N60JC3 датащи(PDF) 4 Page - Microsemi Corporation

номер детали APT77N60JC3
подробное описание детали  Super Junction MOSFET
PDF  5 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT77N60JC3 датащи(HTML) 4 Page - Microsemi Corporation

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APT77N60JC3
Typical Performance
C
rss
C
iss
C
oss
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
0
10
20
30
40
50
0
100 200 300 400 500 600 700 800
0.3
0.5
0.7
0.9
1.1
1.3
1.5
16
12
8
4
0
T
J =+150°C
T
J =+25°C
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100μH
E
on
E
off
t
r
t
f
10
30
50
70
90
110
130
150
10
30
50
70
90
110
130
150
10
30
50
70
90
110
130 150
0
5
10 15 20 25 30 35 40 45 50
V
DD = 400V
I
D = 77A
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
V
DS= 300V
V
DS= 120V
V
DS= 480V
I
D = 77A
t
d(on)
t
d(off)
E
on
E
off
600
500
400
300
200
100
0
8000
7000
6000
5000
4000
3000
2000
1000
0
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100μH
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
60,000
10,000
1,000
100
10
200
100
10
1
250
200
150
100
50
0
16000
14000
12000
10000
8000
6000
4000
2000
0
0.1
1
10
100
1000
1
10
100
800
1ms
100ms
DC line
100μs
10ms
10μs



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