D2013 datasheet(1/4 Pages) SEME-LAB

номер детали	D2013

подробное описание детали	METAL GATE RF SILICON FET

PDF	4 Pages

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производитель	SEME-LAB [Seme LAB]

домашняя страница	http://www.semelab.co.uk

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D2013UK

Prelim.12/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

PD

Power Dissipation

BVDSS

Drain – Source Breakdown Voltage *

BVGSS

Gate – Source Breakdown Voltage *

ID(sat)

Drain Current *

Tstg

Storage Temperature

Tj

Maximum Operating Junction Temperature

83W

65V

±20V

4A

–65 to 150°C

200°C

MECHANICAL DATA

F

A

C

B

(2 pls)

K

2

3

E

1

G (4 pls)

5

4

D

N

M

JI

H

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

20W – 28V – 1GHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW Crss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

DK

PIN 1

SOURCE (COMMON)

PIN 3

DRAIN 2

PIN 5

GATE 1

PIN 2

DRAIN 1

PIN 4

GATE 2

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1MHz to 2 GHz

METAL GATE RF SILICON FET

TetraFET

DIM

mm

Tol.

Inches

Tol.

A

6.45

0.13

0.254

0.005

B

1.65R

0.13

0.065R

0.005

C45°

5°

45°

5°

D

16.51

0.76

0.650

0.03

E

6.47

0.13

0.255

0.005

F

18.41

0.13

0.725

0.005

G

1.52

0.13

0.060

0.005

H

4.82

0.25

0.190

0.010

I

24.76

0.13

0.975

0.005

J

1.52

0.13

0.060

0.005

K

0.81R

0.13

0.032R

0.005

M

0.13

0.02

0.005

0.001

N

2.16

0.13

0.085

0.005

* Per Side

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