D2011UK

Prelim. 9/00

Website: http://www.semelab.co.uk

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

70W

65V

±20V

8A

–65 to 150°C

200°C

MECHANICAL DATA

A

F

E

B

D

C

G

H

I

P

M

N

O

J

K

L

1

2

3

4

5

6

7

8

Q

R

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

10W – 28V – 1GHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW NOISE

• HIGH GAIN

PIN 1 Source

PIN 2 Drain

PIN 3 Drain

PIN 4 Source

PIN 5 Source

PIN 6 Gate

PIN 7 Gate

PIN 8 Source

APPLICATIONS

• HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 2 GHz

METAL GATE RF SILICON FET

TetraFET

DBC3 Package

DIM

mm

Tol.

Inches

Tol.

A

6.47

0.08

.255

.003

B

0.76

0.08

.030

.003

C

45°

5°

45

°

5°

D

0.76

0.08

.030

.003

E

1.14

0.08

.045

.003

F

2.67

0.08

.105

.003

G

11.73

0.13

.462

.005

H

8.43

0.08

.332

.003

I

7.92

0.08

.312

.003

J

0.20

0.02

.008

.001

K

0.64

0.02

.025

.001

L

0.30

0.02

.012

.001

M

3.25

0.08

.128

.003

N

2.11

0.08

.083

.003

O

6.35SQ

0.08

.250SQ

.003

P

1.65

0.51

.065

.020

Q

0.13

max

.005

max

R

0.25

0.07

0.010

.003