Elektronische Bauelemente

BCP1213

PNP

Epitaxial Planar Transistor

01-June-2004 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

E

C

D

B

K

H

F

G

L

J

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

The BCP1213 is designed for using in power amplifier applications

or power switching applications.

MARKING

NY

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-5

V

Collector Current

-2

A

Base Current

-0.4

A

500

mW

Collector Power Dissipation

1000

mW

Junction & Storage Temperature

150, -55~150

°C

Note 1: Mounted on ceramic substrate (250mm

ELECTRICAL CHARACTERISTICS at Ta = 25°C

Parameter

Symbol

Min.

Max.

Unit

Test Conditions

Collector-emitter breakdown voltage

-50

-

V

Collector cut-off current

-

-100

nA

Emitter cut-off current

-

-100

nA

70

240

DC current gain.

20

-

Base-emitter voltage

-

-1.2

V

Collector-emitter saturation voltage

-

-0.5

V

Transition frequency

120 TYP.

MHz

Collector output capacitance

40

pF

Turn-on time

0.1

μs

Storage time

1.0

μs

Switching time

Fall time

0.1

μs

CLASSIFICATION OF hFE

Rank

O

Y

hFE

70 – 140

120 - 240

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.60

G

-

-

B

4.05

4.25

H

1.50 REF.

C

1.40

1.60

J

3.00 REF.

D

2.40

2.60

K

0.40

0.52

E

1.50

1.70

L

0.35

0.41

F

0.89

1.20

SOT-89

Type Name

hFE Ranking