2N6901 datasheet(1/3 Pages) MICROSEMI

номер детали	2N6901

подробное описание детали	N-CHANNEL LOGIC LEVEL MOSFET

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производитель	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

N-CHANNEL LOGIC LEVEL MOSFET

Qualified per MIL-PRF-19500/570

T4-LDS-0188 Rev. 1 (101985)

Page 1 of 3

DEVICES

LEVELS

2N6901

JAN

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Drain – Source Voltage

VDS

100

Vdc

Gate – Source Voltage

VGS

± 10

Vdc

Continuous Drain Current

TC = +25°C

ID1

1.69

Adc

Continuous Drain Current

TC = +100°C

ID2

1.07

Adc

Max. Power Dissipation

Ptl

8.33 (1)

W

Drain to Source On State Resistance

Rds(on)

1.4 (2)

Ω

Operating & Storage Temperature

Top, Tstg

-55 to +150

°C

Note: (1) Derated Linearly by 0.067 W/°C for TC > +25°C

(2) VGS = 5Vdc, ID = 1.07A

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Drain-Source Breakdown Voltage

VGS = 0V, ID = -1mAdc

V(BR)DSS

100

Vdc

Gate-Source Voltage (Threshold)

VDS ≥ VGS, ID = 1.0mA

VDS ≥ VGS, ID = 1.0mA, Tj = +125°C

VDS ≥ VGS, ID = 1.0mA, Tj = -55°C

VGS(th)1

VGS(th)2

VGS(th)3

1.0

0.5

2.0

3.0

Vdc

Gate Current

VGS = ±10V, VDS = 0V

VGS = ±10V, VDS = 0V, Tj = +125°C

IGSS1

IGSS2

±100

±200

nAdc

Drain Current

VGS = 0V, VDS = 80V

VGS = 0V, VDS = 80V, Tj = +125°C

IDSS1

IDSS2

1.0

50.0

µAdc

uAdc

Static Drain-Source On-State Resistance

VGS = 5V, ID = 1.07A pulsed

Tj = -125°C

VGS = 5V, ID = 1.07A pulsed

rDS(on)1

rDS(on)2

1.4

2.6

Ω

Diode Forward Voltage

VGS = 0V, ID = 1.69A pulsed

VSD

0.8

1.6

Vdc

2N6901

TO-205AF

(formerly TO-39)

SEE FIGURE 1

Аналогичный номер детали - 2N6901

производитель	номер детали	датащи	подробное описание детали
New Jersey Semi-Conduct...	2N6901	118Kb / 1P	N-CHANNEL ENHANCEMENT MOSFET

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Samsung semiconductor	IRLZ44	209Kb / 4P	N-CHANNEL LOGIC LEVEL MOSFET
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