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TLE7231G датащи(PDF) 9 Page - Infineon Technologies AG

номер детали TLE7231G
подробное описание детали  SPIDER - 4 channel low side driver
PDF  30 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE7231G датащи(HTML) 9 Page - Infineon Technologies AG

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Datasheet
9
Rev. 1.0, 2008-02-28
SPI Driver for Enhanced Relay Control
SPIDER - TLE7231G
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
T
j = -40 °C to +150 °C; VDD = 3.0 V to VDDA, VDDA = 4.5V to 5.5V.
All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
1) Not subject to production test, specified by design.
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Max.
Power Supply
4.1.1
Digital supply voltage
V
DD
-0.3
5.5
V
4.1.2
Analog supply voltage
VDDA
-0.3
5.5
V
Power Stages
4.1.3
Load current
ID
-0.5
0.5
A
4.1.4
Output voltage for short circuit protection
(single pulse)
VD
–36
V
4.1.5
Voltage at power transistor
VDS
41
V
active clamped
4.1.6
Maximum energy dissipation one channel
E
AS
mJ
2)
2) Pulse shape represents inductive switch off: ID(t) = ID(0) × (1 - t / tpulse); 0 < t < tpulse
single pulse
65
Tj(0) = 85 °C
ID(0) = 0.35 A
single pulse
30
Tj(0) = 150 °C
ID(0) = 0.25 A
repetitive (1 · 104 cycles)
repetitive (1 · 106 cycles)
EAR
18
13
Tj(0) = 150 °C
ID(0) = 0.25 A
ID(0) = 0.17 A
Logic Pins
4.1.7
Voltage at input pin
VIN
-0.3
5.5
V
4.1.8
Voltage at reset pin
VRST
-0.3
V
DD + 0.3
V
3)
4.1.9
Voltage at chip select pin
VCS
-0.3
V
DD + 0.3
V
3)
4.1.10
Voltage at serial clock pin
VSCLK
-0.3
V
DD + 0.3
V
3)
4.1.11
Voltage at serial input pin
VSI
-0.3
V
DD + 0.3
V
3)
4.1.12
Voltage at serial output pin
VSO
-0.3
V
DD + 0.3
V
3)
Temperatures
4.1.13
Junction Temperature during operation
T
j
-40
150
°C–
4.1.14
Dynamic temperature increase while
switching
∆Tj
–60
°C–
4.1.15
Storage Temperature
T
stg
-55
150
°C–
ESD Susceptibility
4.1.16
ESD Resistivity
V
ESD
kV
HBM4)
Output
-4
4
Input / SPI
-2
2



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