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TLE7189F датащи(PDF) 12 Page - Infineon Technologies AG |
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TLE7189F датащи(HTML) 12 Page - Infineon Technologies AG |
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12 / 29 page ![]() TLE7189F Description and Electrical Characteristics Data Sheet 12 Rev. 2.1, 2007-05-30 5 Description and Electrical Characteristics 5.1 MOSFET Driver 5.1.1 Output Stages The 3 low side and 3 high side powerful push-pull output stages of the TLE7189F are all floating blocks, each with its own source pin. This allows the direct connection of the output stage to the source of each single MOSFET, allowing a perfect control of each gate-source voltage even when 200A are driven in the bridge with rise and fall times clearly below 1µs. All 6 output stages have the same output power and thanks to the used charge pump principle they can be switched all up to 30kHz. Its output stages are powerful enough to drive MOSFETs with 400nC gate charge with approx. 150ns fall and rise times or even to run 12 MOSFETs with 200nC each with fall and rise times of approx. 150ns. Maximum allowed power dissipation, max. junction temperature and the capabilities of the charge pump limit the use for higher frequencies. Each output stage has its own short circuit detection block. For more details about short circuit detection see Chapter 5.2.1. Figure 3 Block Diagram of Driver Stages including Short Circuit Detection CB2 GHx SHx VDH V SCP + - Level shifter Floating HS driver 3x GLx SLx V SCP + - Level shifter Floating LS driver 3x CB1 Charge pump 1 Charge pump 2 CB2 CB1 CL2 CH2 CH1 CL1 Under voltage lock out INH VS Error logic Reset Power On Reset Under voltage Over voltage Over temperature Short circuit+disable ERR1 ERR2 ENA short circuit filter SCD SCD SCD Input logic shoot through protection dead time lock / unlock IH1 IL1 IH2 IL2 IH3 IL3 ON / OFF ON / OFF UVLO GND SCDL +3.3V R1 R2 To Vbat Shuntx P-GND SCD SCD 100 Ω |
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