Data Sheet

9

V2.1, 2007-06-20

TLE7188F

General Product Characteristics

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

4.2

Functional Range

4.1.27

Junction to case

R

thJC

–5

K/W

–

Power Dissipation

4.1.28

Power Dissipation (DC) @

TCASE=125°C

P

tot

–2

W

–

ESD Susceptibility

4.1.29

V

ESD

–

2

kV

Gxx excluded

4.1.30

V

ESD

–1

kV

4.1.31

V

ESD

–750

V

1) Not subject to production test, specified by design.

2) ESD susceptibility HBM according to EIA/JESD 22-A 114B

3) ESD susceptibility CDM according to EIA/JESD 22-C 101

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Max.

4.2.1

1) max ratings for Tj has to be considered as well

V

S

5.5

5.5

20

28

VDC

T

4.2.2

D

0

100

%

–

4.2.3

PWM frequency

f

PWM

0

25

kHz

Total gate charge

400nC

4.2.4

I

Q

–30

µA

V

4.2.5

Quiescent current into VDH

I

Q_VDH

–30

µA

V

4.2.6

Supply current at Vs

I

Vs

–

–

–

–

110

110

90

90

mA

f

4.2.7

Supply current at Vs (device

disabled by ENA)

I

Vs(o)

–

–

60

50

mA

Vs=5.5V ... 18V

Vs=18V ... 20V

4.2.8

Supply current at VS_OA

I

Vs_OA

–30

mA

4.2.9

Voltage difference CB2-VDH

V

CB2-VDH

-0.3

20

V

Operation mode

4.2.10

Junction temperature

T

j

-40

150

°C

-40

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Max.