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TLE7182EM датащи(PDF) 21 Page - Infineon Technologies AG |
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TLE7182EM датащи(HTML) 21 Page - Infineon Technologies AG |
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21 / 28 page ![]() Data Sheet 21 Rev 1.1, 2010-09-30 H-Bridge and Dual Half Bridge Driver IC TLE7182EM 5.3 Shunt Signal Conditioning The TLE7182EM incorporates a fast and precise operational amplifier for conditioning and amplification of the current sense shunt signal. The gain of the OpAmp is adjustable by external resistors within a range higher than 5. The usage of higher gains in the application might be limited by required settling time and band width. It is recommended to apply a small offset to the OpAmp, to avoid operation in the lower rail at low currents. The output of the OpAmp ISO is not short-circuit proof. Figure 5 Shunt Signal Conditioning Block Diagram and Over Current Limitation Over current warning see Chapter 5.2.7. 5.3.1 Electrical Characteristics Electrical Characteristics - Current sense signal conditioning V S = 7.0 to 36V, Tj = -40 to +150°C, gain = 5 to 75, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. 5.3.1 Series resistors R S 100 500 1000 Ω – 5.3.2 Feedback resistor Limited by the output voltage dynamic range R fb 2000 7500 – Ω – 5.3.3 Resistor ratio (gain ratio) R fb/RS 5 ––– – 5.3.4 Steady state differential input voltage range across VIN V IN(ss) -400 – 400 mV – 5.3.5 Input differential voltage (ISP - ISN) V IDR -800 – 800 mV – 5.3.6 Input voltage (Both Inputs - GND) (ISP - GND) or (ISN -GND) V LL -800 – 2000 mV – 5.3.7 Input offset voltage of the I-DC link OpAmp, including temperature drift V IO – – +/-2 mV R S=500Ω; VCM=0V; V ISO=1.65V; 5.3.8 Input bias current (ISN,ISP to GND) I IB -300 – – µA V CM=0V; VISO=open 5.3.9 Low level output voltage of ISO V OL -0.1 – 0.2 V I OH=3mA external R S1 R S2 TLE718xEM - + - + V OCTH ERR R REF1 R FB R shunt V DD ISN ISP ISO R REF2 R FB=(RREF1||RREF2 ) |
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