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TLE5011 датащи(PDF) 13 Page - Infineon Technologies AG |
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TLE5011 датащи(HTML) 13 Page - Infineon Technologies AG |
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13 / 45 page ![]() TLE5011 Specification Final Data Sheet 13 V2.0, 2011-03 3 Specification 3.1 Application Circuit The application circuit shows the microcontroller version with open-drain capabilities. Figure 6 Application Circuit A complete system may consist of one TLE5011 and a microcontroller. The second TLE5011 may be used for redundancy to increase system reliability. The microcontroller should contain a CORDIC coprocessor for fast angle calculations, and flash memory for the calibration data storage. 3.2 Absolute Maximum Ratings Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 2 Absolute Maximum Rating Parameters Parameter Symbol Limit Values Unit Notes min. max. Voltage on V DD pin with respect to ground (V SS) VDD -0.5 6.5 V max 40 h / lifetime Voltage on any pin with respect to ground (V SS) VIN -0.5 6.5 V VDD + 0.5 V may not be exceeded Junction temperature TJ -40 150 °C 150 °C for 1000 h not additive Magnetic field induction B - |125| mT max 5 min. @ T A =25°C - |100| max 5 h @ T A =25°C - |70| max 1000 h @ T A =85°C not additive - |60| max 1000 h @ T A = 100°C not additive Storage temperature TST -40 150 °C without magnetic field CAN RX CAN TX Voltage Regulator GMR- Sensor TLE501 1 12V GND CAN µController Master DATA_i SC K CSQ SSC CLK 1k each 100 R 100 R 100 nF VD D VD D GN D DATA_o CAN Tranceiver |
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