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TLE4917 датащи(PDF) 4 Page - Infineon Technologies AG |
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TLE4917 датащи(HTML) 4 Page - Infineon Technologies AG |
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4 / 13 page ![]() Data Sheet 4 normal state. In that case the output Q is off at high magnetic fields and no current is flowing in the open drain transistor. The output transistor can sink up to 1 mA with a maximal saturation voltage VQSAT. Absolute Maximum Ratings Parameter Symbol Limit Values Unit Notes min. max. Supply Voltage VS – 0.3 5.5 V Supply Current IS – 1 2.5 mA Output Voltage VQ – 0.3 5.5 V Output Current IQ – 1 2 mA Programming Pin Voltage VPRG – 0.3 5.5 1) V Junction temperature Tj – 40 150 °C Storage temperature TS – 40 150 °C Magnetic Flux Density B – unlimited mT Thermal Resistance P-TSOP6-6-2 Rth JA – 35 K/W 1) V PRG must not exceed Vs by more than 0.3V Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD Protection Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7 Parameter Symbol Limit Values Unit Notes Min. max. ESD Voltage VESD ± 2 kV R = 1.5 k Ω, C = 100 pF; T = 25 °C |
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