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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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D1011 датащи(PDF) 2 Page - Seme LAB |
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D1011 датащи(HTML) 2 Page - Seme LAB |
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2 / 2 page  D1011UK Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/96 Parameter Test Conditions Min. Typ. Max. Unit Drain–Source BVDSS Breakdown Voltage Zero Gate Voltage IDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* GPS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS = 0 ID = 100mA VDS = 28V VGS = 0 VGS = 20V VDS = 0 ID = 10mA VDS = VGS VDS = 10V ID = 1A PO = 10W VDS = 28V IDQ = 0.1A f = 1GHz VDS = 0V VGS = –5V f = 1MHz VDS = 28V VGS = 0 f = 1MHz VDS = 28V VGS = 0 f = 1MHz V mA µA V S dB % — pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) 70 1 1 17 0.8 13 50 20:1 60 30 2.5 RTHj–case Thermal Resistance Junction – Case Max. 6°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% |
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