D1004UK datasheet(1/4 Pages) SEME-LAB

номер детали	D1004UK

подробное описание детали	METAL GATE RF SILICON FET

PDF	4 Pages

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производитель	SEME-LAB [Seme LAB]

домашняя страница	http://www.semelab.co.uk

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D1004UK

Prelim. 6/99

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

PD

Power Dissipation

BVDSS

Drain – Source Breakdown Voltage

BVGSS

Gate – Source Breakdown Voltage

ID(sat)

Drain Current

Tstg

Storage Temperature

Tj

Maximum Operating Junction Temperature

175W

70V

±20V

20A

–65 to 150°C

200°C

MECHANICAL DATA

B

C

A

D

(2 pls)

E

F

G

H

I

J

K

M

N

1

4

3

2

5

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

80W – 28V – 175MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

•LOW Crss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 16 dB MINIMUM

DT

PIN 1

SOURCE (COMMON)

PIN 3

SOURCE (COMMON)

PIN 5

DRAIN

PIN 2

GATE

PIN 4

SOURCE (COMMON)

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

• HF/VHF COMMUNICATIONS

from 1 MHz to 175 MHz

METAL GATE RF SILICON FET

TetraFET

DIM

mm

Tol.

Inches

Tol.

A

6.35 DIA

0.13

0.250 DIA

0.005

B

3.17 DIA

0.13

0.125 DIA

0.005

C

18.41

0.25

0.725

0.010

D

5.46

0.13

0.215

0.005

E

5.21

0.13

0.205

0.005

F

7.62

MAX

0.300

MAX

G

21.59

0.38

0.850

0.015

H

3.94

0.13

0.155

0.005

I

12.70

0.13

0.500

0.005

J

0.13

0.03

0.005

0.001

K

24.76

0.13

0.975

0.005

M

2.59

0.13

0.102

0.005

N

4.06

0.25

0.160

0.010

Аналогичный номер детали - D1004UK

производитель	номер детали	датащи	подробное описание детали
Tyco Electronics	D10040-000	607Kb / 11P	14mm Series Metal Oxide Varistors
PREMIER DEVICES, INC.	D10040180GT	143Kb / 4P	GaAs Power Doubler, 40 - 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
RF Micro Devices	D10040180GT	228Kb / 3P	GaAs Power Doubler Hybrid 40MHz to 1000MHz
Qorvo, Inc	D10040180GT	228Kb / 3P	GaAs Power Doubler Hybrid 40MHz to 1000MHz
PREMIER DEVICES, INC.	D10040180GTH	134Kb / 4P	GaAs Power Doubler, 40 - 1000MHz, 19.0dB min. Gain @ 1GHz, 440mA max. @ 24VDC

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Аналогичное описание - D1004UK

производитель	номер детали	датащи	подробное описание детали
Seme LAB	D1011UK	16Kb / 2P	METAL GATE RF SILICON FET
	D1015UK	60Kb / 4P	METAL GATE RF SILICON FET
	D1016UK	49Kb / 4P	METAL GATE RF SILICON FET
	D1017UK	223Kb / 5P	METAL GATE RF SILICON FET
	D1031UK	15Kb / 2P	METAL GATE RF SILICON FET
	D1082UK	20Kb / 2P	METAL GATE RF SILICON FET
	D1084UK	19Kb / 2P	METAL GATE RF SILICON FET
	D1211UK	16Kb / 2P	METAL GATE RF SILICON FET
	D1212UK	16Kb / 2P	METAL GATE RF SILICON FET
	D5012UK	31Kb / 2P	METAL GATE RF SILICON FET

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