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BDS10 датащи(PDF) 2 Page - Seme LAB

номер детали BDS10
подробное описание детали  SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
PDF  2 Pages
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производитель  SEME-LAB [Seme LAB]
домашняя страница  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BDS10 датащи(HTML) 2 Page - Seme LAB

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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 7/00
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
LAB
SEME
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
BDS10
VCB = 60V
BDS11
VCB = 80V
BDS12
VCB = 100V
BDS10
VCE = 30V
BDS11
VCE = 40V
BDS12
VCE = 50V
VEB = 5V
BDS10
BDS11
IC = 100mA
BDS12
IC = 5A
IB = 0.5A
IC = 10A
IB = 2.5A
IC = 10A
IB = 2.5A
IC = 5A
VCE = 4V
IC = 0.5A
VCE = 4V
IC = 5A
VCE = 4V
IC = 10A
VCE = 4V
IC = 0.5A
VCE = 4V
500
500
500
1
1
1
1
60
80
100
1
3
2.5
1.5
40
250
15
150
5
3
mA
mA
mA
V
V
V
V
MHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
*Pulsed : Pulse duration = 300
ms , duty cycle = 1.5%
THERMAL DATA
RTHj-case
Thermal resistance junction - case
Max. 1.4°C/W
RTHcase-sink
Thermal resistance case - heatsink **
Typ. 1.0°C/W
RTHj-a
Thermal resistance junction - ambient
Max. 80°C/W
** Smooth flat surface using thermal grease.
Parameter
Test Conditions
Max.
Unit
ton
ts
tr
On Time
(td + tr)
Storage Time
Fall Time
IC = 4A
VCC = 30V
IB1 = 0.4A
IC = 4A
VCC = 30V
IB1 = –IB2 = 0.4A
0.7
1.0
0.8
ms
ms
ms
SWITCHING CHARACTERISTICS
ICBO
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
VBE(sat)*
VBE*
hFE*
fT
Collector cut-off current
(IE = 0)
Collector cut-off current
(IB = 0)
Emitter cut-off current
(IC = 0)
Collector - Emitter
sustaining voltage (IB = 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency



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