GM2321 datasheet(2/3 Pages) GSME

2 / 3 page

桂林斯壯微電子有限責任公司

Guilin

Strong

Micro-Electronics

Co.,Ltd.

GM2321

■

ELECTRICAL

CHARACTERISTICS

電特性

(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Pulse Width<300μs; Duty Cycle<2.0%

Characteristic

特性參數

Symbol

符號

Min

最小值

Typ

典型值

Max

最大值

Unit

單位

Drain-Source Breakdown Voltage

漏極-源極擊穿電壓(I

D = -250uA,V

GS=0V)

BVDSS

-20

—

Gate Threshold Voltage

栅極開启電壓(I

D = -250uA,V

GS= VDS)

VGS(th)

-0.5

—

-1.5

Diode Forward Voltage Drop

内附二極管正向壓降(I

S= -0.75A,V

GS=0V)

VSD

—

-1.5

Zero Gate Voltage Drain Current

零栅壓漏極電流(VGS=0V, VDS= -16V)

(VGS=0V, VDS= -16V, TA=55℃)

IDSS

—

-1

-10

Gate Body Leakage

栅極漏電流(VGS=+10V, VDS=0V)

IGSS

—

+100

Static Drain-Source On-State Resistance

静态漏源導通電阻(I

D= -2.8A,V

GS= -4.5V)

RDS(ON)

—

100

mΩ

Static Drain-Source On-State Resistance

静态漏源導通電阻(I

D= -2A,V

GS= -2.5V)

RDS(ON)

—

120

mΩ

Input Capacitance 輸入電容

(VGS=0V, VDS= -10V,f=1MHz)

CISS

—

600

—

Output Capacitance 輸出電容

(VGS=0V, VDS= -10V,f=1MHz)

COSS

—

120

—

Turn-ON Time 开启時間

(VDS= -10V, ID= -2.8A, RGEN=6Ω)

t(on)

—

Turn-OFF Time 关断時間

(VDS= -10V, ID= -2.8A, RGEN=6Ω)

t(off)

—

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