BSP613P_07 datasheet(6/8 Pages) INFINEON

номер детали	BSP613P

подробное описание детали	SIPMOS Small-Signal-Transistor

PDF	8 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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6 / 8 page

2007-02-08

Rev.2.4

Page 6

BSP613P

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter :

ID = -2.9 A, VGS = -10 V

-60

-20

100

°C

180

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.34

BSP613P

typ

98%

10 Gate threshold voltage

VGS(th) = f (Tj)

parameter:

VGS = VDS, ID = -1 mA

-60

-20

100

°C

180

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

-5.0

-60

-20

100

°C

180

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

-5.0

98%

-60

-20

100

°C

180

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

-5.0

typ

-60

-20

100

°C

180

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

-5.0

11 Typ. capacitances

C = f (VDS)

parameter:

VGS=0V, f=1 MHz

-5

-10

-15

-20

-25

-30

-40

VDS

Ciss

Coss

Crss

12 Forward characteristics of reverse diode

IF = f (VSD)

parameter:

Tj , tp = 80 µs

0.0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4 V

-3.0

VSD

-1

-10

BSP613P

j = 25 °C typ

j = 25 °C (98%)

j = 150 °C typ

j = 150 °C (98%)

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