BSP171PL6327 datasheet(3/9 Pages) INFINEON

номер детали	BSP171PL6327

подробное описание детали	SIPMOS Small-Signal-Transistor

PDF	9 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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3 / 9 page

BSP171P

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

365

460

Output capacitance

C oss

105

135

Reverse transfer capacitance

C rss

-40

Turn-on delay time

t d(on)

-6

Rise time

t r

-25

Turn-off delay time

t d(off)

208

276

Fall time

t f

130

Gate Charge Characteristics

Gate to source charge

Q gs

-1.2

-1.6

Gate to drain charge

Q gd

--5

-7

Gate charge total

Q g

-13

-20

Gate plateau voltage

V plateau

--3-

Output charge

Q oss

V DD=-15 V, V GS=0 V

--5

-7

Reverse Diode

Diode continuous forward current

I S

-1.9

Diode pulse current

I S,pulse

-7.6

Diode forward voltage

V SD

V GS=0 V, I F=1.9 A,

T j=25 °C

-0.84

-1.1

Reverse recovery time

t rr

120

Reverse recovery charge

Q rr

-125

-190

2) See figure 16 for gate charge parameter definition

T A=25 °C

Values

V GS=0 V,

V DS=-25 V, f =1 MHz

V DD=-25 V,

V GS=-10 V,

I D=-1.9 A, R G=6 Ω

V DD=-48 V, I D=1.9 A,

V GS=0 to -10 V

V R=-30 V, I F=|I S|,

di F/dt =100 A/µs

Rev 2.

page 3

200

7-02-08

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