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BSO613SPVG датащи(PDF) 2 Page - Infineon Technologies AG

номер детали BSO613SPVG
подробное описание детали  SIPMOS Power-Transistor
PDF  9 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSO613SPVG датащи(HTML) 2 Page - Infineon Technologies AG

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2007-03-02
Rev.1.3
Page 2
BSO613SPV G
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
RthJS
-
-
25
K/W
SMD version, device on PCB:
@ min. footprint; t
£ 10 sec.
@ 6 cm2 cooling area 1); t
£ 10 sec.
RthJA
-
-
-
-
100
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = -250 µA
V(BR)DSS
-60
-
-
V
Gate threshold voltage,
VGS = VDS
ID = 1 mA
VGS(th)
-2.1
-3
-4
Zero gate voltage drain current
VDS = -60 V, VGS = 0 V, Tj = 25 °C
VDS = -60 V, VGS = 0 V, Tj = 125 °C
IDSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
VGS = -20 V, VDS = 0 V
IGSS
-
-10
-100
nA
Drain-source on-state resistance
VGS = -10 V, ID = -3.44 A
RDS(on)
-
0.11
0.13
W
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.



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