BFS481 datasheet(3/6 Pages) INFINEON

номер детали	BFS481

подробное описание детали	NPN Silicon RF Transistor

PDF	6 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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3 / 6 page

2007-04-26

BFS481

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 10 mA, VCE = 8 V, f = 500 MHz

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

0.23

0.4

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

0.13

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

0.4

Noise figure

IC = 2 mA, VCE = 8 V, ZS = ZSopt,

f = 900 MHz

IC = 2 mA, VCE = 8 V, ZS = ZSopt,

f = 1.8 GHz

0.9

1.2

Power gain, maximum stable1)

IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

Gms

Power gain, maximum available2)

IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

Gma

Transducer gain

IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 900 MHz

IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 1.8 MHz

|S21e|2

1Gms = |S21 / S12|

2Gma = |S21e / S12e| (k-(k²-1)1/2)

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