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BFP740 датащи(PDF) 2 Page - Infineon Technologies AG

номер детали BFP740
подробное описание детали  NPN Silicon Germanium RF Transistor
PDF  10 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP740 датащи(HTML) 2 Page - Infineon Technologies AG

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2009-12-04
BFP740
2
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
TA > 0°C
TA ≤ 0°C
VCEO
4
3.5
V
Collector-emitter voltage
VCES
13
Collector-base voltage
VCBO
13
Emitter-base voltage
VEBO
1.2
Collector current
IC
30
mA
Base current
IB
3
Total power dissipation1)
TS ≤ 89°C
Ptot
160
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
≤ 380
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO
4
4.7
-
V
Collector-emitter cutoff current
VCE = 13 V, VBE = 0
ICES
-
-
30
µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO
-
-
100
nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO
-
-
3
µA
DC current gain
IC = 25 mA, VCE = 3 V, pulse measured
hFE
160
250
400
-
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance



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