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BFP720ESD датащи(PDF) 12 Page - Infineon Technologies AG

номер детали BFP720ESD
подробное описание детали  Robust High Performance Low Noise Bipolar RF Transistor
PDF  29 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP720ESD датащи(HTML) 12 Page - Infineon Technologies AG

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BFP720ESD
Electrical Characteristics
Data Sheet
12
Revision 1.0, 2010-06-29
5
Electrical Characteristics
5.1
DC Characteristics
5.2
General AC Characteristics
Table 5
DC Characteristics at
T
A =25°C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Collector emitter breakdown voltage
V
(BR)CEO
4.2
4.7
–
V
I
C =1mA, IB =0
Open base
Collector emitter leakage current
I
CES
––
400
nA
V
CE =2 V, VBE =0
Emitter/base shortened
Collector base leakage current
I
CBO
––
400
nA
V
CB =2 V, IE =0
Open emitter
Emitter base leakage current
I
EBO
––
10
μA
V
EB =0.5 V, IC =0
Open collector
DC current gain
h
FE
160
250
400
V
CE =3 V, IC = 15 mA
Pulse measured
Table 6
General AC Characteristics at
T
A =25°C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Transition frequency
f
T
–43
–
GHz
V
CE =3 V, IC =15mA
f =1GHz
Collector base capacitance
C
CB
–0.05
–
pF
V
CB =3 V, VBE =0
f =1MHz
Emitter grounded
Collector emitter capacitance
C
CE
–0.4
–
pF
V
CE =3 V, VBE =0
f =1MHz
Base grounded
Emitter base capacitance
C
EB
–0.45
–
pF
V
EB =0.4 V, VCB =0
f =1MHz
Collector grounded



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