BFP520F datasheet(1/6 Pages) INFINEON

номер детали	BFP520F

подробное описание детали	NPN Silicon RF Transistor

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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2007-03-30

BFP520F

1

2

4

3

NPN Silicon RF Transistor*

• For highest gain low noise amplifier

at 1.8 GHz and 2 mA / 2 V

Outstanding Gms = 23 dB

Noise Figure F = 0.95 dB

• For oscillators up to 15 GHz

• Transition frequency f

T = 45 GHz

• Gold metallisation for high reliability

• SIEGET  45 - Line

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP520F

APs

1=B

2=E

3=C

4=E

-

TSFP-4

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

TA > 0 °C

TA ≤ 0 °C

VCEO

2.5

2.4

V

Collector-emitter voltage

VCES

10

Collector-base voltage

VCBO

10

Emitter-base voltage

VEBO

1

Collector current

IC

40

mA

Base current

IB

4

Total power dissipation2)

TS ≤ 107 °C

Ptot

100

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

1Pb-containing package may be available upon special request

2TS is measured on the collector lead at the soldering point to pcb

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