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BFP450 датащи(PDF) 10 Page - Infineon Technologies AG

номер детали BFP450
подробное описание детали  High Linearity Low Noise Si NPN RF Transistor
PDF  27 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP450 датащи(HTML) 10 Page - Infineon Technologies AG

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BFP450
Electrical Characteristics
Data Sheet
10
Revision 1.0, 2010-10-22
4
Electrical Characteristics
4.1
DC Characteristics
4.2
General AC Characteristics
Table 3
DC Characteristics at
T
A =25°C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Collector emitter breakdown voltage
V
(BR)CEO
4.5
5–V
I
C =1mA, IB =0
Open base
Collector emitter leakage current
I
CES
––
10
µA
V
CE =15V, VBE =0
–1
30
nA
V
CE =3V, VBE =0
Emitter/base shortened
Collector base leakage current
I
CBO
–1
30
nA
V
CB =3V, IE =0
Open emitter
Emitter base leakage current
I
EBO
–0.1
3
µA
V
EB =0.5 V, IC =0
Open collector
DC current gain
h
FE
60
95
130
V
CE =4V, IC =50mA
50
85
120
V
CE =3V, IC =90mA
Pulse measured
Table 4
General AC Characteristics at
T
A =25°C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Transition frequency
f
T
18
24
–
GHz
V
CE =3V, IC =90mA,
f =1GHz
Collector base capacitance
C
CB
–
0.48
0.8
pF
V
CB =3V, VBE =0 V
f =1MHz
Emitter grounded
Collector emitter capacitance
C
CE
–1.2
–
pF
V
CE =3V, VBE =0 V
f =1MHz
Base grounded
Emitter base capacitance
C
EB
–1.7
–
pF
V
EB =0.5 V, VCB =0 V
f =1MHz
Collector grounded



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