Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SFT __ __ __ __

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TX = TX Level

TXV = TXV Level

S = S Level

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2012 = 120V

2014 = 140V

SFT2010 thru SFT2014

200 AMP

100 – 140 Volt

High Energy

NPN Transistor

Features:

•

•

600 Watts Power Dissipation

•

Excellent SOA Curve

•

Es/b of 800mJ

•

Gain of over 5 at 200A

•

High Reliability Construction

•

Planar Chip Construction with Low Leakage and

Very Fast Switching

•

TX, TXV, S-Level Screening Available

Consult Factory

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Voltage

SFT2010

SFT2012

SFT2014

100

120

140

Volts

Collector – Base Voltage

250

Volts

Emitter – Base Voltage

8

Volts

Collector Current

200

Amps

Base Current

75

Amps

Total Device Dissipation

Derate above 50

ºC

600

4

Watts

W/ ºC

Operating & Storage Temperature

-65 to +200

ºC

Maximum Thermal Resistance

(Junction to Case)

0.25

ºC/W

NOTES:

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%

1/ For Ordering Information, Price, and Availability Contact Factory.

2/ Screening per MIL-PRF-19500.

3/ For Package Outlines Contact Factory.

4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only.

5/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

TO-3

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0108A

DOC