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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SED75KB30 датащи(PDF) 2 Page - Solid States Devices, Inc |
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SED75KB30 датащи(HTML) 2 Page - Solid States Devices, Inc |
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2 / 2 page  NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SH0019C DOC ELECTRICAL CHARACTERISTICS Symbol Maximum Unit Instantaneous Forward Voltage Drop (TA = 25 oC, 300 μsec Pulse) IF =50 ADC IF =75 ADC VF1 VF2 0.52 0.60 VDC Instantaneous Forward Voltage Drop (IF =50 ADC, TA = +125 oC, 300 μsec Pulse) VF3 0.45 VDC Reverse Leakage Current (Rated VR, 300 μsec pulse minimum) TA = 25 oC TA = 125 oC IR1 IR2 2 450 mA Junction Capacitance (VR = 5 VDC, TA = 25 oC, f = 1 MHz) CJ 4600 pF Solid State Devices, Inc. 14701 Firestone Blvd. * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SED75KB30 SED75KE30 CASE OUTLINE: SED75KB30 .315±.010 .315 ±.010 .110 MAX .275±.005 SQ. CASE OUTLINE: SED75KE30 |
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