IXYS reserves the right to change limits, test conditions, and dimensions.

IXGL200N60B3

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

C

= 60A, V

95

160

S

C

ies

26

nF

C

oes

V

1260

pF

C

res

97

pF

Q

g

750

nC

Q

ge

I

C

= 100A, V

115

nC

Q

gc

245

nC

t

d(on)

44

ns

t

ri

83

ns

E

on

1.6

mJ

t

d(off)

310

450

ns

t

fi

183

300

ns

E

off

2.9

4.5

mJ

t

d(on)

42

ns

t

ri

80

ns

E

on

2.4

mJ

t

d(off)

430

ns

t

fi

300

ns

E

off

4.2

mJ

R

thJC

0.31

°C/W

R

thCS

0.11

°C/W

Inductive load, T

°°°°C

I

V

Inductive load, T

°°°°C

I

V

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

NOTE: BOTTOM HEATSINK MEETS 2,500Vrms ISOLATION TO

THE OTHER PINS.