NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0043E

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

2N50

15

__

__

│

│

│

│

│

│

│

│

│

│

│

│

│

└

Screening

2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

└

Package

/39 = TO-39

/5 = TO-5

└

Family / Voltage

1000V

2N5015

0.5 AMP, 1000 Volts

NPN Transistor

FEATURES:

 BVCER 1000 volts

 Low Saturation Voltage

 Low Leakage at High Temperature

 High Gain, Low Saturation

 200° C Operating, Gold Eutectic Die Attach

Maximum Ratings

Symbol

Value

Units

1000

V

Collector – Base Voltage

1000

V

Emitter – Base Voltage

5

V

Collector – Emitter Breakdown Voltage

450

V

Peak Collector Current

0.5

A

Peak Base Current

250

mA

Derate above 100º C

2.0

20

W

mW/ºC

Operating and Storage Temperature

-65 to +200

ºC

Thermal Resistance, Junction to Case

50 (typ 22)

ºC/W

Notes:

TO-39

TO-5

1/ For ordering information, price, operating curves, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.

4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%