TL(PGE,FGE,GE,PYE)23TP(F)

2009-01-26

2

Product Name

Forward Current

Reverse Voltage

Power Dissipation

Operating

Temperature

Storage

Temperature

TLPGE23TP(F)

50

4

120

TLFGE23TP(F)

50

4

120

TLGE23TP(F)

50

4

120

TLPYE23TP(F)

50

4

120

−40 to 100

−40 to 120

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Forward current derating

Emission Wavelength

Luminous Intensity

Forward Voltage

Reverse

Current

Δλ

Product Name

Min

Typ.

Max

Typ.

Typ.

Min

Typ.

Typ.

Max

Max

TLPGE23TP(F)

-

558

564

562

14

20

850

3000

20

2.1

2.4

20

50

4

TLFGE23TP(F) 559

565

570

568

15

20

1530

5000

20

2.0

2.4

20

50

4

TLGE23TP(F)

565

571

576

574

17

20

2720

7000

20

2.0

2.4

20

50

4

TLPYE23TP(F)

574

580

586

583

14

20

2720

8000

20

2.0

2.4

20

50

4

Unit

nm

mA

mcd

V

mA

μA

V

Precautions

Please be careful of the following:

• Soldering temperature: 260°C max, soldering time: 3 s max

(soldering portion of lead: up to 1.6 mm from the body of the device)

• If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress

to the resin. Soldering should be performed after lead forming.

• This visible LED lamp also emits some IR light.

If a photo detector is located near the LED lamp, please ensure that it will not be affected by this IR light.

Ambient temperature Ta (°C)

40

0

120

60

0

40

80

20

20

60

80

100