NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FP0045E

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4470 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

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__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Lead Option

__ = Straight Leads

DB = Down Bend

UB = Up Bend

M = TO-254

Z = TO-254Z

SFF60P05M

SFF60P05Z

-60 AMP/-50 Volts

25 m

 typical

P-Channel

POWER MOSFET

Features:



Rugged Construction with Poly Silicon Gate



Low RDS(on) and High Transconductance



Excellent High Temperature Stability



Very Fast Switching Speed



Fast Recovery and Superior dv/dt Performance



Increased Reverse Energy Capability



Low Input and Transfer Capacitance for Easy

Paralleling



Hermetically Sealed



TX, TXV, and Space Level Screening Available.

Consult Factory.

Symbol

Value

Units

Drain - Source Voltage

-50

V

Gate – Source Voltage

+20

V

Continuous Drain Current

-60

A

Operating & Storage Temperature

-55 to +150

ºC

Thermal Resistance, Junction to Case

0.8

ºC/W

Total Device Power Dissipation

156

118

Watts

NOTES:

TO-254 (M)

TO-254Z (Z)

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Maximum current limited by package configuration.

4/ Unless otherwise specified, all electrical characteristics @25