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IXGH40N60C2 датащи(PDF) 2 Page - IXYS Corporation

номер детали IXGH40N60C2
подробное описание детали  C2-Class High Speed IGBTs
PDF  5 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGH40N60C2 датащи(HTML) 2 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 40N60C2
IXGT 40N60C2
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= 30 A; V
CE = 10 V,
20
36
S
Pulse test, t
≤ 300 μs, duty cycle ≤ 2 %
C
ies
2500
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
180
pF
C
res
54
pF
Q
g
95
nC
Q
ge
I
C = 30 A, VGE = 15 V, VCE = 300 V
14
nC
Q
gc
36
nC
t
d(on)
18
n s
t
ri
20
n s
t
d(off)
90
140
n s
t
fi
32
n s
E
off
0.20
0.37 mJ
t
d(on)
18
n s
t
ri
20
n s
E
on
0.3
mJ
t
d(off)
130
n s
t
fi
80
240
n s
E
off
0.50
mJ
R
thJC
0.42 K/W
R
thCK
(TO-247)
0.25
K/W
Inductive load, T
J = 25°
°°°°C
I
C = 30 A, VGE = 15 V
V
CE = 400 V, RG = Roff = 3 Ω
Inductive load, T
J = 125°
°°°°C
I
C = 30 A, VGE = 15 V
V
CE = 400 V, RG = Roff = 3 Ω
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
∅ P
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
one or more of the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478B2



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