IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60B2

IXGP16N60B2

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

TO-263 (IXGA) Outline

Pins: 1 - Gate

2 - Drain

TO-220 (IXGP) Outline

1 = Gate

2 = Collector

3 = Emitter

4 = Collector

1 = Gate

2 = Collector

3 = Emitter

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

8

S

C

ies

675

pF

C

oes

V

60

pF

C

res

20

pF

Q

g(on)

24

nC

Q

ge

I

5

nC

Q

gc

13

nC

t

d(on)

18

ns

t

ri

20

ns

E

on

0.16

mJ

t

d(off)

73

ns

t

fi

70

ns

E

off

0.12

0.22 mJ

t

d(on)

17

ns

t

ri

20

ns

E

on

0.26

mJ

t

d(off)

140

ns

t

fi

125

ns

E

off

0.38

mJ

R

thJC

0.83

°C/W

R

thCK

TO-220

0.50

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2