IXYS reserves the right to change limits, test conditions, and dimensions.

IXFR 64N60P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ. Max.

g

fs

V

40

63

S

C

iss

12

nF

C

oss

V

GS

= 0 V, V

1150

pF

C

rss

80

pF

t

d(on)

28

ns

t

r

V

I

23

ns

t

d(off)

R

G

= 1

Ω (External)

79

ns

t

f

24

ns

Q

g(on)

200

nC

Q

gs

V

70

nC

Q

gd

68

nC

R

thJC

0.35

° C/W

R

thC

0.15

° C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ. Max.

I

S

V

64

A

I

SM

Repetitive

150

A

V

SD

I

1.5

V

t

rr

I

200

ns

Q

RM

V

0.6

µC

I

RM

6.0

A

Notes:

1. Pulse test, t

≤300 µs, duty cycle d ≤ 2 %;

2. Test current I

ISOPLUS247 Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2