IXFR48N60P datasheet(1/4 Pages) IXYS

номер детали	IXFR48N60P

подробное описание детали	PolarHV HiPerFET Power MOSFET ISOPLUS247

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производитель	IXYS [IXYS Corporation]

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DS99184E(12/05)

IXFR 48N60P

V

DSS

= 600

V

I

D25

=

32 A

R

DS(on)

≤≤≤≤≤ 150 mΩ

Ω

t

rr

≤≤≤≤≤ 200 ns

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

600

V

GS(th)

V

DS = VGS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±200

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125° C

1000

µA

R

DS(on)

V

GS = 10 V, ID = IT

150

m

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25° C to 150° C

600

V

DGR

T

J = 25° C to 150° C; RGS = 1 MΩ

600

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25° C32

A

I

DM

T

C = 25° C, pulse width limited by TJM

110

A

I

AR

T

C = 25° C32

A

E

AR

T

C = 25° C70

mJ

E

AS

T

C = 25° C

2.0

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

20

V/ns

T

J ≤150° C, RG = 4 Ω

P

D

T

C = 25° C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

° C

V

ISOL

50/60 Hz, RMS, 1 minute

2500

V~

F

C

Mounting Force

20..120 / 4.5..26

N/lb.

Weight

5g

G = Gate

D = Drain

S = Source

ISOLATED TAB

G

D

S

ISOPLUS247 (IXFR)

E153432

Features

l International standard isolated

package

l UL recognized package

l Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

l

Fast intrinsic diode

Advantages

l

Easy to mount

l

Space savings

l

High power density

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

PolarHVTM HiPerFET

Power MOSFET

ISOPLUS247TM

(Electrically Isolated Back Surface)

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