IXYS reserves the right to change limits, test conditions, and dimensions.

IXFC 14N80P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

8

15

S

C

iss

3900

pF

C

oss

V

250

pF

C

rss

19

pF

t

d(on)

25

ns

t

r

V

27

ns

t

d(off)

R

75

ns

t

f

21

ns

Q

g(on)

61

nC

Q

gs

V

18

nC

Q

gd

20

nC

R

thJC

0.75

0.95

°C/W

R

thCS

0.21

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

14

A

I

SM

Repetitive

40

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

t

rr

I

250

ns

-di/dt = 100 A/

μs

Q

RM

V

0.4

μC

I

RM

7A

Ref: IXYS CO 0177 R0

NOTE:

1. Bottom heatsink (Pin 4) is electrically isolated from

Pin 1, 2, or 3.

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2

6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537