IXFA10N80P IXFP10N80P

IXFQ10N80P IXFH10N80P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Note 1. Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

7

11

S

C

iss

2050

pF

C

oss

V

172

pF

C

rss

16

pF

t

d(on)

21

ns

t

r

22

ns

t

d(off)

62

ns

t

f

22

ns

Q

g(on)

40

nC

Q

gs

V

12

nC

Q

gd

14

nC

R

thJC

0.42

°C/W

R

thCS

(TO-220)

0.50

°C/W

R

thCS

(TO-247 & TO-3P)

0.25

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

10

A

I

SM

Repetitive, Pulse WidthLlimited by T

JM

30

A

V

SD

I

1.5

V

t

rr

200

250

ns

I

RM

3.0

A

Q

RM

0.6

μC

I

-di/dt = 100A/

μs

V

Resistive Switching Times

V

R

Fig. 1. Forward-Bias Safe Operating Area

0.1

1.0

10.0

100.0

10

100

1000

TJ = 150ºC

TC = 25ºC

Single Pulse

1ms

100µs

25µs