IXFP10N60P datasheet(1/4 Pages) IXYS

номер детали	IXFP10N60P

подробное описание детали	Polar HiPerFET Power MOSFET

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

600

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

600

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C10

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

25

A

I

A

T

C = 25°C10

A

E

AS

T

C = 25°C

500

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

200

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062in.) from Case for 10s

300

°C

T

sold

Plastic Body for 10 Seconds

260

°C

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXFA10N60P

IXFP10N60P

V

DSS

= 600V

I

D25

= 10A

R

DS(on) ≤

≤≤≤≤ 740m

Ω

t

rr

≤≤≤≤≤ 200ns

DS99424F(04/10)

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-263 AA (IXFA)

G

D S

TO-220AB (IXFP)

D (Tab)

G

S

D (Tab)

PolarTM HiPerFETTM

Power MOSFET

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

600

V

GS(th)

V

DS = VGS, ID = 1mA

3.0

5.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

μA

T

J = 125°C

500

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Notes 1, 2

740 m

Ω

Features

International Standard Packages

Dynamic dv/dt Rating

Avalanche Rated

Fast Intrinsic Rectifier

Low Q

G

Low R

DS(on)

Low Drain-to-Tab Capacitance

Low Package Inductance

Advantages

Easy to Mount

Space Savings

Applications

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

Uninterrupted Power Supplies

AC Motor Drives

High Speed Power Switching

Applications

Аналогичный номер детали - IXFP10N60P

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