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IXFP5N100P датащи(PDF) 1 Page - IXYS Corporation |
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IXFP5N100P датащи(HTML) 1 Page - IXYS Corporation |
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1 / 4 page ![]() © 2008 IXYS CORPORATION, All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 1000 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 1000 V V GSS Continuous ±30 V V GSM Transient ±40 V I D25 T C = 25°C5 A I DM T C = 25°C, pulse width limited by TJM 10 A I A T C = 25°C5 A E AS T C = 25°C 300 mJ dV/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns P D T C = 25°C 250 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062) from case for 10s 300 °C T SOLD Plastic body for 10s 260 °C M d Mounting torque (TO-220,TO-247) 1.13 / 10 Nm/lb.in. Weight TO-263 2.5 g TO-220 3.0 g TO-247 6.0 g DS99923(07/08) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 1000 V V GS(th) V DS = VGS, ID = 250μA 3.0 6.0 V I GSS V GS = ±30V, VDS = 0V ±100 nA I DSS V DS = VDSS 10 μA V GS = 0V T J = 125°C 750 μA R DS(on) V GS = 10V, ID = 0.5 • ID25, Note 1 2.8 Ω PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA5N100P IXFH5N100P IXFP5N100P V DSS = 1000V I D25 = 5A R DS(on) ≤ ≤≤≤≤ 2.8Ω Ω Ω Ω Ω Features International standard packages Dynamic dv/dt Rating Avalanche Rated Low R DS(ON) , rugged PolarTM process Low Q G Low Drain-to-Tab capacitance Low package inductance Advantages Easy to mount Space savings Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies Uninterrupted power supplies AC motor control High speed power switching applications Preliminary Technical Information G = Gate D = Drain S = Source TAB = Drain TO-220 (I XFP) G (TAB) D S (TAB) TO-247 (I XFH) G D S G S TO-263 (I XFA) (TAB) |
Аналогичный номер детали - IXFP5N100P |
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Аналогичное описание - IXFP5N100P |
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