IXFP4N100P datasheet(1/4 Pages) IXYS

номер детали	IXFP4N100P

подробное описание детали	Polar HiPerFET Power MOSFET

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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DS99921A(7/10)

PolarTM HiPerFETTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXFA4N100P

IXFP4N100P

V

DSS

= 1000V

I

D25

= 4A

R

DS(on) ≤

≤≤≤≤ 3.3Ω

Ω

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-263 AA (IXFA)

G

D S

TO-220AB (IXFP)

D (Tab)

G

S

D (Tab)

Features

International Standard Packages

Low R

DS(on) and QG

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1000

V

GS(th)

V

DS = VGS, ID = 250μA

3.0

6.0

V

I

GSS

V

GS = ± 20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS= 0V

10

μA

T

J = 125°C

750

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Notes 1

3.3

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

4

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

8

A

I

A

T

C = 25°C4

A

E

AS

T

C = 25°C

200

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

10

V/ns

P

D

T

C = 25°C

150

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062in.) from Case for 10s

300

°C

T

sold

Plastic Body for 10 Seconds

260

°C

F

C

Mounting Force (TO-263)

10.65 / 2.2..14.6

Nm/lb.in.

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

Аналогичный номер детали - IXFP4N100P

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXFP4N100P	270Kb / 5P	Power MOSFET
Inchange Semiconductor ...	IXFP4N100P	332Kb / 2P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXFP4N100PM	121Kb / 4P	Polar HiperFET Power MOSFET

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Аналогичное описание - IXFP4N100P

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IXFP4N100P датащи(PDF) 1 Page - IXYS Corporation

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Аналогичный номер детали - IXFP4N100P

Аналогичное описание - IXFP4N100P

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