IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 15 V; I

Note 1

4

10

S

C

iss

2900

pF

C

oss

V

315

pF

C

rss

50

pF

t

d(on)

20

n s

t

r

V

23

n s

t

d(off)

R

40

n s

t

f

15

n s

Q

g(on)

90

nC

Q

gs

V

30

nC

Q

gd

40

nC

R

thJC

0.50

K/W

R

thCK

0.15

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

12

A

I

SM

Repetitive; pulse width limited by T

JM

48

A

V

SD

I

1.3

V

t

rr

200

300

ns

Q

RM

1.6

µC

I

RM

7A

I

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. I

IXFR10N100

I

IXFR12N100

I

IXFR 10N100Q

IXFR 12N100Q

ISOPLUS 247 OUTLINE

Note: Please see IXFH12N100Q

DataSheetforcharacteristic

curves.