IXFP12N50PM datasheet(1/5 Pages) IXYS

номер детали	IXFP12N50PM

подробное описание детали	Polar Power MOSFET HiPerFET

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 5 page

DS99510F(04/08)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

500

V

GS(th)

V

DS = VGS, ID = 1mA

3.0

5.5 V

I

GSS

V

GS = ±30V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS

5

μA

V

GS = 0V

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10V, ID = 6A, Note 1

500 m

Ω

PolarTM Power MOSFET

HiPerFETTM

(Electrically Isolated Tab)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFP12N50PM

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25°C to 150°C

500

V

DGR

T

J

= 25°C to 150°C; R

GS = 1 MΩ

500

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C

6

A

I

DM

T

C = 25°C, pulse width limited by TJM

30

A

I

A

T

C = 25°C

12

A

E

AS

T

C = 25°C

600

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ =150°C

10

V/ns

P

D

T

C = 25°C

50

W

T

J

- 55 ... +150

°C

T

JM

150

°C

T

stg

- 55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

2.5

g

G = Gate

D = Drain

S = Source

Features

Plastic overmolded tab for electrical

isolation

International standard package

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

OVERMOLDED TO-220

(I

XFP...M) OUTLINE

G

D S

Isolated Tab

V

DSS

= 500V

I

D25

= 6A

R

DS(on) ≤

≤≤≤≤ 500m

Ω

t

rr

≤≤≤≤≤ 300ns

Аналогичный номер детали - IXFP12N50PM

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXFP12N50P	150Kb / 5P	Polar Power MOSFET HiperFET

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