IXFN280N085 datasheet(1/5 Pages) IXYS

номер детали	IXFN280N085

подробное описание детали	HiPerFET Power MOSFETs Single Die MOSFET

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

85

V

GS(th)

V

DS = VGS, ID = 8mA

2.0

4.0

V

I

GSS

V

GS = ±20V, VDS = 0V

±200

nA

I

DSS

V

DS = VDSS

100

μA

V

GS = 0V

T

J = 125°C

2

mA

R

DS(on)

V

GS = 10V, ID = 100A, Note 1

4.4

m

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C85

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

85

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C, Chip capability

280

A

I

L(RMS)

External Lead Current Limit

200

A

I

DM

T

C = 25°C, pulse width limited by TJM

1120

A

I

A

T

C = 25°C

200

A

E

AS

T

C = 25°C4

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

5

V/ns

P

d

T

C = 25°C

700

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1min

2500

V~

I

ISOL ≤ 1mA

t = 1s

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal connection torque

1.3/11.5

Nm/lb.in.

Weight

30

g

HiPerFETTM Power

MOSFETs Single Die

MOSFET

DS98747B(12/08)

S

G

S

D

miniBLOC, SOT-227 B

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

IXFN280N085

V

DSS

= 85V

I

D25

= 280A

R

DS(on) ≤

≤≤≤≤ 4.4mΩ

Ω

Features

•International standard package

•miniBLOC, with Aluminium nitride

isolation

•Low R

DS(on) HDMOS

TM

process

•Rugged polysilicon gate cell structure

•Avalanche rated

• Guaranteed FBSOA

•Low package inductance

•Fast intrinsic Rectifier

Advantages

• Easy to mount

• Space savings

• High power density

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

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